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| UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=350mW *High current gain 2 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBT5401-AE3-R MMBT5401L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., 1 QW-R206-011.C MMBT5401 PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Operating Temperature Storage Temperature PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 350 +150 -40 ~ +150 UNIT V V V mA mW ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-120V, IE=0 VBE=-3V, Ic=0 VCE=-5V, Ic=-1mA VCE=-5V, Ic=-10mA VCE=-5V, Ic=-50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, Ic=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V RS=1k, f=10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 1 1 400 6.0 8 V V MHz pF dB 100 Note: Pulse test: PW<300s, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 B 150-240 C 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R206-011.C MMBT5401 TYPICAL CHARACTERICS Fig.1 Collector output Capacitance 20 PNP EPITAXIAL SILICON TRANSISTOR Fig.2 DC current Gain 3 10 Cob,Capacitance (pF) VCE=-5V HFE, DC current Gain 16 f=1MHz IE=0 2 10 12 8 1 10 4 0 0 -10 -10 1 2 -10 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector-Base voltage (V) Ic,Collector current (mA) Fig.3 Base-Emitter on Voltage 3 -10 1 -10 Fig.4 Saturation voltage Ic=10*IB Ic,Collector current (mA) VCE=-5V Saturation voltage (V) 2 -10 -10 0 VBE(sat) -10 1 -1 -10 VCE(sat) -2 -10 0 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 0 -10 1 -10 2 -10 3 -10 Base-Emitter voltage (V) Ic,Collector current (mA) Fig.5 Current gain -bandwidth product 3 10 Current Gain-bandwidth product,fT(MHz) VCE=-10V 2 10 1 10 0 10 -1 -10 0 -10 -10 1 2 -10 3 -10 Ic,Collector current (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-011.C MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R206-011.C |
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